Device | Parameter | Condition |
---|---|---|
GC | Column | HP-FFAP (0.32 mm i.d.×30 m, 0.25 μM) |
Oven temperature program | 60°C (4 min) → 115°C (28°C/min) → 240°C (20°C/min, 5 min) | |
Inlet temperature | 200°C | |
Injector temperature | 200°C | |
Injection volume | 1 μL | |
Split ratio | Splitless | |
Carrier | Helium, 1.0 mL/min | |
MS | Ionization mode | EI |
Electron impact mode | 70 eV | |
Selected ion (m/z) | 74 | |
MS ion source temperature | 200°C |